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参数资料
| 型号： | BSO615CT |
| 厂商： | Infineon Technologies |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
| 其它图纸： | SO-8 Dual |
| 标准包装： | 1 |
| 系列： | SIPMOS® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.1A，2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 3.1A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 20µA |
| 闸电荷(Qg) @ Vgs： | 22.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 380pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | PG-DSO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1619 (CN2011-ZH PDF) |
| 其它名称： | BSO615CXTINDKR |
5
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
28-PIN PLCC (J28-1)
Rev. 03
MICREL, INC.
2180 FORTUNE DRIVE
SAN JOSE, CA 95131
USA
TEL
+ 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com
The information furnished by Micrel in this data sheet is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use.
Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can
reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into
the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser’s
use or sale of Micrel Products for use in life support appliances, devices or systems is at Purchaser’s own risk and Purchaser agrees to fully indemnify
Micrel for any damages resulting from such use or sale.
2006 Micrel, Incorporated.
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| 445A31J16M00000 | CRYSTAL 16.000000 MHZ 9PF SMD |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BSO615N | 功能描述:MOSFET DUAL N-CH 60V 2.6A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:SIPMOS® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| BSO615N G | 功能描述:MOSFET SIPMOS Sm-Signal TRANSISTOR 60V 2.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSO615NG | 制造商:Infineon Technologies AG 功能描述:MOSFET Dual N-Ch 60V 2.6A Logic SOIC8 |
| BSO615NGHUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 2.6A 8-Pin SO 制造商:Infineon Technologies AG 功能描述:N-KANAL SMALL SIGNAL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET DUAL N-CH 60V 2.6A 8-SOIC |
| BSO615NGXT | 制造商:Infineon Technologies AG 功能描述:TRANS MOSFET N-CH 60V 2.6A 8PIN DSO - Cut TR (SOS) |
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