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| 型号： | BSO615N |
| 厂商： | Infineon Technologies |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N-CH 60V 2.6A 8-SOIC |
| 产品变化通告： | Product Discontinuation 22/Feb/2008 |
| 标准包装： | 1 |
| 系列： | SIPMOS® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 2.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 20µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 380pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | PG-DSO-8 |
| 包装： | 剪切带 (CT) |
| 其它名称： | BSO615NINCT |
1
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
DESCRIPTION
FEATURES
s Differential PECL data and clock inputs
s 48mA sink, 15mA source TTL outputs
s Single +5V power supply
s Multiple power and ground pins to minimize noise
s Specified within-device skew
s VBB output for single-ended use
s Fully compatible with MC10H/100H607
s Available in 28-pin PLCC package
The SY10/100H607 are 6-bit, registered, dual supply
PECL-to-TTL translators. The devices feature differential
PECL inputs for both data and clock. The TTL outputs
feature 48mA sink, 15mA source drive capability for
driving high fanout loads. The asynchronous master reset
control is a PECL level input.
With its differential PECL inputs and TTL outputs, the
H607 device is ideally suited for the receive function of a
HPPI bus-type board-to-board interface application. The
on-chip registers simplify the task of synchronizing the
data between the two boards.
The device is available in either ECL standard:
the
10H device is compatible with 10K logic levels, while the
100H device is compatible with 100K logic levels.
BLOCK DIAGRAM
SY10H607
SY100H607
Rev.: G
Amendment: /0
Issue Date:
March 2006
DQ
R
CLK
Dn
CLK
Qn
MR
VBB
1 OF 6 BITS
Dn
REGISTERED HEX
PECL-TO-TTL
Pin
Function
D0 – D5
True PECL Data Inputs
D0 – D5
Inverted PECL Data Inputs
CLK, CLK
Differential PECL Clock Input
MR
PECL Master Reset Input
Q0 – Q5
TTL Outputs
VCCE
PECL VCC (5.0V)
VCCT
TTL VCC (5.0V)
TGND
TTL Ground
EGND
PECL Ground
VBB
VBB Reference Output (PECL)
PIN NAMES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BSO615N G | 功能描述:MOSFET SIPMOS Sm-Signal TRANSISTOR 60V 2.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSO615NG | 制造商:Infineon Technologies AG 功能描述:MOSFET Dual N-Ch 60V 2.6A Logic SOIC8 |
| BSO615NGHUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 2.6A 8-Pin SO 制造商:Infineon Technologies AG 功能描述:N-KANAL SMALL SIGNAL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET DUAL N-CH 60V 2.6A 8-SOIC |
| BSO615NGXT | 制造商:Infineon Technologies AG 功能描述:TRANS MOSFET N-CH 60V 2.6A 8PIN DSO - Cut TR (SOS) |
| BSO615NNTMA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET DUAL N-CH 60V 2.6A 8-SOIC |
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