参数资料
型号: BSR20
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: PNP switching transistor
中文描述: 300 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: PLASTIC PACKAGE-3
文件页数: 3/8页
文件大小: 67K
代理商: BSR20
1997 Apr 21
3
Philips Semiconductors
Product specification
PNP high-voltage transistors
BSR20; BSR20A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BSR20
BSR20A
collector-emitter voltage
BSR20
BSR20A
emitter-base voltage
collector current (DC)
peak collector current
base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
130
160
V
V
V
CEO
open base
65
65
120
150
5
300
600
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
open collector
T
amb
25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
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