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| 型号： | BSS123LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 170MA SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 170mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 100mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.8V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 20pF @ 25V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | BSS123LT1GOSDKR |
BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
N ? Channel SOT ? 23
Features
? BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS
http://onsemi.com
170 mAMPS
100 VOLTS
R DS(on) = 6 W
N ? Channel
3
Rating
Symbol
Value
Unit
Drain ? Source Voltage
Gate ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 50 m s)
Drain Current
V DSS
V GS
V GSM
100
± 20
± 40
Vdc
Vdc
Vpk
Adc
1
2
? Continuous (Note 1) I D 0.17
? Pulsed (Note 2) I DM 0.68
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
2
SOT ? 23
SA M G
G
Total Device Dissipation FR ? 5 Board
(Note 3) T A = 25 ° C
Derate above 25 ° C
Thermal Resistance,
Junction ? to ? Ambient
P D
R q JA
225
1.8
556
mW
mW/ ° C
° C/W
CASE 318
STYLE 21
SA
M
G
1
Gate
= Device Code
= Date Code
= Pb ? Free Package
2
Source
Junction and Storage Temperature
T J , T stg
? 55 to +150
° C
(*Note: Microdot may be in either location)
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 m s, Duty Cycle v 2.0%.
3. FR ? 5 = 1.0 0.75 0.062 in.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
November, 2013 ? Rev. 9
1
Publication Order Number:
BSS123LT1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS123LT1G | 制造商:ON Semiconductor 功能描述:MOSFET Transistor Power Dissipation:0.22 |
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