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参数资料
| 型号： | BSS138_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 220MA SOT-23 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 欧姆 @ 220mA，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 2.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 27pF @ 25V |
| 功率 - 最大： | 360mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
Octo ber 200 5
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
D
S
Features
? 0.22 A, 50 V. R DS(ON) = 3.5 ? @ V GS = 10 V
R DS(ON) = 6.0 ? @ V GS = 4.5 V
? High density cell design for extremely low R DS(ON)
? Rugged and Reliable
? Compact industry standard SOT-23 surface mount
package
D
G
S
SOT-23
G
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
50
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
0.22
A
– Pulsed
0.88
P D
Maximum Power Dissipation
Derate Above 25 ° C
(Note 1)
0.36
2.8
W
mW/ ° C
T J , T STG
T L
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
? 55 to +150
300
° C
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
350
° C/W
Package Marking and Ordering Information
Device Marking
SS
Device
BSS138
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 200 5 Fairchild Semiconductor Corporation
BSS138 Rev C (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS138DW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS138DW_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS138DW_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS138DW7 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| BSS138DW-7 | 功能描述:MOSFET 50V 200mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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