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参数资料
| 型号： | BSS62 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | PNP Darlington transistors |
| 中文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件页数： | 6/8页 |
| 文件大小： | 52K |
| 代理商： | BSS62 |
1997 May 14
6
Philips Semiconductors
Product specification
PNP Darlington transistors
BSS61; BSS62
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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| BSS72S | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200A I(C) | TO-18 |
| BSS73CSM | NPN |
| BSS73DCSM | Transient Voltage Suppressor Diodes |
| BSS73 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS62A | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTORS |
| BSS62T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT |
| BSS63 | 功能描述:两极晶体管 - BJT PNP/ 100V/ 200mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BSS63 T/R | 功能描述:两极晶体管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BSS63,215 | 功能描述:两极晶体管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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