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参数资料
| 型号： | BSS81C |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 59K |
| 代理商： | BSS81C |
BSS79, BSS81
2
Nov-30-2001
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BSS79
BSS81
V(BR)CEO
40
35
-
V
Collector-base breakdown voltage
IC = 10 A, IE = 0
V(BR)CBO
75
-
Emitter-base breakdown voltage
IE = 10 A, IC = 0
V(BR)EBO
6
-
Collector cutoff current
VCB = 60 V, IE = 0
ICBO
-
10
nA
Collector cutoff current
VCB = 60 V, IE = 0 , TA = 150 °C
ICBO
-
10
A
Emitter cutoff current
VEB = 3 V, IC = 0
IEBO
-
10
nA
DC current gain 1)
IC = 100 A, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
BSS79/81B
BSS79/81C
BSS79/81B
BSS79/81C
BSS79/81B
BSS79/81C
BSS79/81B
BSS79/81C
BSS79/81B
BSS79/82C
hFE
20
35
25
50
35
75
40
100
25
40
-
120
300
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
0.3
1.3
V
Base-emitter saturation voltage 1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
-
1.2
2.0
1) Pulse test: t
≤=300s, D = 2%
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