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参数资料
| 型号： | BST74A |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-channel vertical D-MOS transistor |
| 中文描述： | 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件页数： | 4/12页 |
| 文件大小： | 63K |
| 代理商： | BST74A |
April 1995
4
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BST74A
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Drain-source breakdown voltage
I
D
= 10
μ
A; V
GS
= 0
Drain-source leakage current
V
DS
= 160 V; V
GS
= 0
Gate-source leakage current
V
GS
= 20 V; V
DS
= 0
Gate threshold voltage
I
D
= 1 mA; V
DS
= V
GS
V
(BR)DS
min.
200 V
I
DSS
max.
10
μ
A
I
GSS
max.
100 nA
min.
max.
0.8
2.8
V
V
V
GS(th)
Drain-source ON-resistance (see Fig.4)
I
D
= 250 mA; V
GS
= 10 V
typ.
max.
6
12
R
DS(on)
Transfer admittance
I
D
= 250 mA; V
DS
= 15 V
Input capacitance at f = 1 MHz
V
DS
= 10 V; V
GS
= 0
Y
fs
typ.
250 mS
typ.
max.
70
90
pF
pF
C
iss
Output capacitance at f = 1 MHz
V
DS
= 10 V; V
GS
= 0
typ.
max.
20
30
pF
pF
C
oss
Feedback capacitance at f = 1 MHz
V
DS
= 10 V; V
GS
= 0
typ.
max.
5
10
pF
pF
C
rss
Switching times (see Figs 2 and 3)
I
D
= 250 mA; V
DS
= 50 V; V
GS
= 0 to 10 V
t
on
typ.
max.
typ.
max.
4 ns
10 ns
15 ns
25 ns
t
off
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