参数资料
型号: BST84
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: N-channel enhancement mode vertical D-MOS transistor
中文描述: 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SOT-89, 3 PIN
文件页数: 6/12页
文件大小: 72K
代理商: BST84
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BST84
Fig.6 T
j
= 25
°
C; typical values.
handbook, halfpage
(A)
0
10
0
0.2
0.4
0.6
0.8
2
4
6
8
MDA766
VDS (V)
VGS = 10 V
5 V
3 V
4 V
Fig.7 Power derating curve.
handbook, halfpage
0
0.8
0.4
0
50
100
200
150
MDA767
Ptot
(W)
Tamb (
°
C)
Fig.8
at 400 mA/10 V; typical values.
k
R
at T
R
DS (on)
at 25
°
C
-------------------------------------------
;
=
handbook, halfpage
50
0
50
k
Tj (
°
C)
150
0.5
2.5
100
2
1.5
1
MDA742
Fig.9
V
GS(th)
at 1 mA; typical values.
k
V
V
GS th
)
at 25
°
C
--------------------------------------------
;
=
handbook, halfpage
50
0
50
k
Tj (
°
C)
150
0.7
1.1
100
1
0.9
0.8
MDA743
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