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参数资料
| 型号： | BT131W-600 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 4Q Triac |
| 中文描述： | 4Q双向可控硅 |
| 封装： | BT131W-600<SOT223 (SOT223)|<<http://www.nxp.com/packages/SOT223.html<1<week 35, 2003,; |
| 文件页数： | 2/9页 |
| 文件大小： | 110K |
| 代理商： | BT131W-600 |
1;3 Semiconductors
Product specification
Triacs
BT131W series
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate triacs in a
SYMBOL
PARAMETER
MAX.
MAX. UNIT
plastic envelope suitable for surface
mounting, intended for use in general
BT131W-
500
600
purpose bidirectional switching and
V
DRM
Repetitive peak off-state voltages
500
600
V
phase control applications. These
I
T(RMS)
RMS on-state current
1
A
devices are intended to be interfaced
I
TSM
Non-repetitive peak on-state current
12.5
A
directly
to
microcontrollers,
logic
integrated circuits and other low
power gate trigger circuits.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V
DRM
Repetitive peak off-state
-
500
1
600
1
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
sp
≤ 110 C
-
1
A
I
TSM
Non-repetitive peak
full sine wave; T
j = 25 C prior to
on-state current
surge
t = 20 ms
-
12.5
A
t = 16.7 ms
-
13.8
A
I
2tI2t for fusing
t = 10 ms
-
0.5
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 1.5 A; IG = 0.2 A;
on-state current after
dI
G/dt = 0.2 A/
μs
triggering
T2+ G+
-
50
A/
μs
T2+ G-
-
50
A/
μs
T2- G-
-
50
A/
μs
T2- G+
-
10
A/
μs
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
4
1
23
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
μs.
January 2004
1
Rev 2.000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BT131W-600 /T3 | 功能描述:双向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BT131W-600,135 | 功能描述:双向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BT131WSERIES | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Triacs logic level |
| BT132 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Triacs logic level |
| BT132_SERIES_D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Triacs logic level |
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