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参数资料
| 型号： | BT136F-600G |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | DIODE ZENER SINGLE 500mW 18Vz 7mA-Izt 0.05 0.1uA-Ir 14Vr DO35-GLASS 5K/REEL |
| 中文描述： | 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 文件页数： | 3/7页 |
| 文件大小： | 42K |
| 代理商： | BT136F-600G |
Philips Semiconductors
Product specification
Triacs
BT136F series
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
...F
50
TYP.
MAX.
UNIT
BT136F-
...
...G
200
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
= 67% V
DRM(max)
V;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 C;
I
T(RMS)
= 4 A;
dI
/dt = 1.8 A/ms; gate
open circuit
I
TM
= 6 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
100
250
-
V/
μ
s
dV
com
/dt
Critical rate of change of
commutating voltage
-
-
10
50
-
V/
μ
s
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
= 180
120
90
60
30
BT136
IT(RMS) / A
Ptot / W
Ths(max) / C
125
119.5
114
108.5
103
97.5
92
86.5
81
1
1
10
Number of cycles at 50Hz
100
1000
0
5
10
15
20
25
30
BT136
ITSM / A
T
ITSM
time
I
Tj initial = 125 C max
T
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
BT136
ITSM / A
T
ITSM
time
I
Tj initial = 125 C max
T
dI /dt limit
T2- G+ quadrant
-50
0
50
Ths / C
100
150
0
1
2
3
4
5
BT136X
92 C
IT(RMS) / A
February 1996
3
Rev 1.100
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相关代理商/技术参数 |
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|---|---|
| BT136F700 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|700V V(DRM)|4A I(T)RMS|SOT-186 |
| BT136F700E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|700V V(DRM)|4A I(T)RMS|SOT-186 |
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