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参数资料
| 型号： | BT137SSERIESE |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | TVS-瞬态抑制二极管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 双向敏感门 |
| 文件页数： | 1/6页 |
| 文件大小： | 52K |
| 代理商： | BT137SSERIESE |
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
envelope,
suitable
mounting,
intended
applications
requiring
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
applications include motor control,
industrial
and
domestic
heating and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
for
surface
use
high
in
BT137S
(or BT137M)
-
BT137S
(or BT137M)
-
BT137S
(or BT137M)
-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
600
600F
600G
600
800
800F
800G
800
V
DRM
V
Typical
I
T(RMS)
I
TSM
8
65
8
65
8
A
A
lighting,
65
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
102 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
8
A
-
-
-
65
71
21
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
1
2
3
tab
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
October 1997
1
Rev 1.200
相关PDF资料 |
PDF描述 |
|---|---|
| BT137XSERIES | Triacs |
| BT137XD | Triacs logic level |
| BT137X-500 | DIODE ZENER SINGLE 150mW 6.8Vz 5mA-Izt 0.0588 2uA-Ir 4 SOT-523 3K/REEL |
| BT137X-500D | Triacs logic level |
| BT137X-500E | Triacs sensitive gate |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BT137X | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Triacs sensitive gate |
| BT137X_SERIES | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Triacs |
| BT137X_SERIES_E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Triacs sensitive gate |
| BT137X-500 | 制造商:TECCOR 制造商全称:TECCOR 功能描述:Thyristor Product Catalog |
| BT137X-500D | 制造商:TECCOR 制造商全称:TECCOR 功能描述:Thyristor Product Catalog |
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