参数资料
型号: BT138F700G
英文描述: TRIAC|700V V(DRM)|12A I(T)RMS|SOT-186
中文描述: 可控硅| 700V的五(DRM)的| 12A条口(T)的有效值|采用SOT - 186
文件页数: 4/6页
文件大小: 47K
代理商: BT138F700G
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT138 series E
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
100
150
0
0.5
1
1.5
2
2.5
3
BT138E
T50
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
BT138
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.175 V
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT138
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
bidirectional
unidirectional
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
dVD/dt (V/us)
September 1997
4
Rev 1.200
相关PDF资料
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BT138SERIES Triacs
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BT138X_SERIES_E Triacs sensitive gate
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