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参数资料
| 型号： | BT138XSERIESE |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | Triacs sensitive gate |
| 中文描述： | 双向敏感门 |
| 文件页数： | 1/7页 |
| 文件大小： | 54K |
| 代理商： | BT138XSERIESE |
Philips Semiconductors
Product specification
Triacs
BT138X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a full pack
plastic envelope, intended for use in
applications
requiring
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
applications include motor control,
industrial
and
domestic
heating and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
high
BT138X-
BT138X-
BT138X-
500
500F
500G
500
600
600F
600G
600
800
800F
800G
800
Typical
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
lighting,
I
T(RMS)
I
TSM
12
95
12
95
12
95
A
A
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
hs
≤
56 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
12
A
-
-
-
95
105
45
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
1 2 3
case
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.200
相关PDF资料 |
PDF描述 |
|---|---|
| BT138 | Triacs |
| BT139-800F | Triacs(双向可控硅) |
| BT139-800H | Triacs high noise immunity |
| BT139-500H | Triacs high noise immunity |
| BT139-600H | Triacs high noise immunity |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BT138Y | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:12 A four-quadrant triacs, sensitive gate, insulated |
| BT138Y-600E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:12 A four-quadrant triacs, sensitive gate, insulated |
| BT138Y-600E,127 | 功能描述:双向可控硅 Thyristor TRIAC 600V 105A 3-Pin (3+Tab) RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BT138Y-800E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:12 A four-quadrant triacs, sensitive gate, insulated |
| BT138Y-800E,127 | 功能描述:双向可控硅 Thyristor TRIAC 800V 105A 3-Pin (3+Tab) RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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