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参数资料
| 型号： | BT139-500F |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | Triacs |
| 中文描述： | 500 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 39K |
| 代理商： | BT139-500F |
Philips Semiconductors
Product specification
Triacs
BT139 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
in free air
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.2
1.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
...F
UNIT
BT139-
...
...G
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
5
8
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
10
22
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
7
40
60
40
60
45
40
60
40
60
45
1.6
1.5
-
60
90
60
90
60
mA
mA
mA
mA
mA
V
V
V
20
8
10
6
1.2
0.7
0.4
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
...F
50
TYP.
MAX.
UNIT
BT139-
...
...G
200
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 C;
I
T(RMS)
= 16 A;
dI
/dt = 7.2 A/ms; gate
open circuit
I
TM
= 20 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
100
250
-
V/
μ
s
dV
com
/dt
Critical rate of change of
commutating voltage
-
-
10
20
-
V/
μ
s
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
April 2003
2
Rev 1.500
相关PDF资料 |
PDF描述 |
|---|---|
| BT139-500G | Triacs |
| BT139-600F | Triacs |
| BT139-600G | Triacs |
| BT139-700 | TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
| BT139-700E | TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BT139-500G | 制造商:TECCOR 制造商全称:TECCOR 功能描述:Thyristor Product Catalog |
| BT139-500H | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Triacs high noise immunity |
| BT139-600 | 功能描述:双向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BT139-600,127 | 功能描述:双向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BT139-600 | 制造商:NXP Semiconductors 功能描述:TRIAC 16A 600V TO-220 |
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