参数资料
型号: BT139-800H
厂商: NXP SEMICONDUCTORS
元件分类: 晶闸管
英文描述: Triacs high noise immunity
中文描述: 800 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 4/6页
文件大小: 45K
代理商: BT139-800H
Philips Semiconductors
Product specification
Triacs
high noise immunity
BT139 series H
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
BT139H
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
0
0.5
1
1.5
VT / V
2
2.5
3
0
10
20
30
40
50
BT139
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.195 V
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT139
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
unidirectional
bidirectional
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
9.3
dV/dt (V/us)
5.6
dIcom/dt =
20 A/ms
16
off-state dV/dt limit
12
7.2
BT139...H SERIES
September 1997
4
Rev 1.200
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BT139-500H Triacs high noise immunity
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