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参数资料
| 型号： | BT168_SERIES |
| 英文描述： | Thyristors logic level for RCD/GFI/LCCB applications |
| 中文描述： | 晶闸管为民盟的逻辑电平/ GFI / LCCB应用 |
| 文件页数： | 2/6页 |
| 文件大小： | 43K |
| 代理商： | BT168_SERIES |
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB Applications
BT168 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-lead
Thermal resistance
junction to lead
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
60
UNIT
K/W
pcb mounted; lead length = 4mm
-
150
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 k
V
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 k
I
T
= 1 A
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
= V
; I
T
= 10 mA; T
j
= 125 C;
gate open circuit
V
D
= V
; V
R
= V
RRM(max)
; T
j
= 125 C;
R
GK
= 1 k
MIN.
20
-
-
-
-
0.2
TYP.
50
2
2
1.2
0.5
0.3
MAX.
200
6
5
1.35
0.8
-
UNIT
μ
A
mA
mA
V
V
V
I
D
, I
R
Off-state leakage current
-
0.05
0.1
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
t
q
Circuit commutated
turn-off time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; R
GK
= 1 k
I
TM
= 2 A; V
= V
DRM(max)
; I
G
= 10 mA;
dI
G
/dt = 0.1 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 1.6 A; V
R
TM
/dt = 30 A/
μ
s;
dV
D
/dt = 2 V/
μ
s; R
GK
= 1 k
MIN.
-
TYP.
25
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
-
100
-
μ
s
September 1997
2
Rev 1.100
相关PDF资料 |
PDF描述 |
|---|---|
| BT168SERIES | Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168D | Thyristors logic level for RCD/ GFI/ LCCB applications(应用于RCD/ GFI/ LCCB的可控硅逻辑电平) |
| BT168 | Film Capacitor; Voltage Rating:600VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.1uF; Capacitance Tolerance:+/- 10%; Lead Pitch:24.613mm; Series:PS; Size:30.48 x 16.51; Termination:Radial Leaded |
| BT169E | Thyristors logic level(可控硅逻辑电平) |
| BT169GW | Thyristors logic level(可控硅逻辑电平) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BT168W | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168WSERIES | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT169 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristor logic level |
| BT169_08 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCRS |
| BT169_SERIES | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Thyristors logic level |
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