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参数资料
| 型号： | BT168B |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | Thyristors logic level for RCD/ GFI/ LCCB applications(应用于RCD/ GFI/ LCCB的可控硅逻辑电平) |
| 中文描述： | 0.8 A, 200 V, SCR, TO-92 |
| 封装： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 43K |
| 代理商： | BT168B |
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB applications
BT168 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
thyristors
intended for use in Residual Current
Devices/ Ground Fault Interrupters/
Leakage Current Circuit Breakers
(RCD/ GFI/ LCCB)
where a minimum I
limit is needed.
These devices may be interfaced
directly
to
microcontrollers,
integrated circuits and other low
power gate trigger circuits.
passivated,
in
sensitive
plastic
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
MAX. UNIT
a
envelope,
BT168
B
D
E
G
V
DRM
,
V
RRM
I
T(AV)
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
200
400
500
600
V
applications
0.5
0.5
0.5
0.5
A
I
T(RMS)
I
TSM
0.8
8
0.8
8
0.8
8
0.8
8
A
A
logic
PINNING - TO92 variant
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode
2
gate
3
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
B
D
E
G
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
-
200
1
400
1
500
1
600
1
V
half sine wave;
T
≤
83 C
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
= 25 C prior to surge
t = 10 ms
I
TM
= 2 A; I
= 10 mA;
dI
G
/dt = 100 mA/
μ
s
-
0.5
A
I
T(RMS)
I
TSM
RMS on-state current
Non-repetitive peak
on-state current
-
-
-
0.8
8
9
A
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
0.32
50
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
1
5
5
2
A
V
V
W
W
C
C
over any 20 ms period
0.1
150
125
-40
-
a
k
g
3 2 1
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.100
相关PDF资料 |
PDF描述 |
|---|---|
| BT168_SERIES | Thyristors logic level for RCD/GFI/LCCB applications |
| BT168SERIES | Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168D | Thyristors logic level for RCD/ GFI/ LCCB applications(应用于RCD/ GFI/ LCCB的可控硅逻辑电平) |
| BT168 | Film Capacitor; Voltage Rating:600VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.1uF; Capacitance Tolerance:+/- 10%; Lead Pitch:24.613mm; Series:PS; Size:30.48 x 16.51; Termination:Radial Leaded |
| BT169E | Thyristors logic level(可控硅逻辑电平) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BT168BW | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168D | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168DW | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168E | 功能描述:SCR BULK MOSFET RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| BT168E,112 | 功能描述:SCR BULK MOSFET RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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