参数资料
型号: BT169
厂商: 友顺科技股份有限公司
英文描述: SCR
中文描述: 可控硅
文件页数: 2/7页
文件大小: 52K
代理商: BT169
Philips Semiconductors
Product specification
Thyristor
logic level
BT169W Series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-sp
Thermal resistance
junction to solder point
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
15
UNIT
K/W
pcb mounted, minimum footprint
pcb mounted; pad area as in fig:14
-
-
156
70
-
-
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 k
V
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 k
I
T
= 2 A
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
= V
; I
T
= 10 mA; T
j
= 125 C;
gate open circuit
V
D
= V
; V
R
= V
RRM(max)
; T
j
= 125 C;
R
GK
= 1 k
MIN.
-
-
-
-
-
0.2
TYP.
50
2
2
1.35
0.5
0.3
MAX.
200
6
5
1.5
0.8
-
UNIT
μ
A
mA
mA
V
V
V
I
D
, I
R
Off-state leakage current
-
0.05
0.1
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
t
q
Circuit commutated
turn-off time
CONDITIONS
V
=67% V
; T
= 125 C;
exponential waveform; R
GK
= 1k
I
TM
= 2 A; V
= V
DRM(max)
; I
G
= 10 mA;
dI
G
/dt = 0.1 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 1.6 A; V
R
TM
/dt = 30 A/
μ
s;
dV
D
/dt = 2 V/
μ
s; R
GK
= 1 k
MIN.
-
TYP.
25
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
-
100
-
μ
s
September 1997
2
Rev 1.200
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