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参数资料
| 型号： | BT258B-500R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | Thyristors logic level |
| 中文描述： | 8 A, 500 V, SCR |
| 文件页数： | 2/6页 |
| 文件大小： | 41K |
| 代理商： | BT258B-500R |
Philips Semiconductors
Product specification
Thyristors
logic level
BT258B series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to heatsink
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
2.0
UNIT
K/W
minimum footprint, FR4 board
-
55
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 16 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 110 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
MIN.
-
-
-
-
-
0.1
-
TYP.
50
0.4
0.3
1.3
0.4
0.2
0.1
MAX.
200
10
6
1.5
1.5
-
0.5
UNIT
μ
A
mA
mA
V
V
V
mA
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
t
q
Circuit commutated
turn-off time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; R
GK
= 100
I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 5 mA;
dI
G
/dt = 0.2 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 12 A; V
R
/dt = 10 A/
μ
s;
dV
D
/dt = 2 V/
μ
s; R
GK
= 1 k
MIN.
50
TYP.
100
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
-
100
-
μ
s
September 1997
2
Rev 1.100
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BT258B-600R | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristors logic level |
| BT258B-800R | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristors logic level |
| BT258S-800LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:SCR logic level, high temperature |
| BT258S-800LT,118 | 功能描述:SCR Thyristor SCR 800V 82A 3-Pin (2+Tab) RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| BT258S-800LT118 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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