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参数资料
| 型号： | BT258U |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | Thyristors logic level |
| 中文描述： | 晶闸管逻辑电平 |
| 文件页数： | 1/6页 |
| 文件大小： | 51K |
| 代理商： | BT258U |
Philips Semiconductors
Product specification
Thyristors
logic level
BT258U series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate thyristors
inaplasticenvelope, intendedforuse
in general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly
to
microcontrollers,
integrated circuits and other low
power gate trigger circuits.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BT258U-
500R
500
600R
600
800R
800
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
logic
5
8
75
5
8
75
5
8
A
A
A
75
PINNING - SOT533
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
NUMBER
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
500
1
600
1
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
800
V
half sine wave; T
≤
111 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 10 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
5
8
A
A
-
-
-
-
75
82
28
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
2
5
5
5
A
V
V
W
W
C
C
over any 20 ms period
0.5
150
125
2
-40
-
1
Top view
MBK915
2
3
a
k
g
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
2
Note: Operation above 110C may require the use of a gate to cathode resistor of 1k
or less.
March 1999
1
Rev 1.000
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| BT258X_SERIES | Transient Voltage Suppressor Diodes |
| BT258X | Thyristors logic level |
| BT261KPJ | Transient Voltage Suppressor Diodes |
| BT300-500R | Thyristors(可控硅) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BT258U_SERIES | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Thyristors logic level |
| BT258U-500R | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristors logic level |
| BT258U-600R | 功能描述:SCR THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| BT258U-600R,127 | 功能描述:SCR THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| BT258U-800R | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Thyristors logic level |
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