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参数资料
| 型号： | BTA151SERIES |
| 英文描述： | Thyristors sensitive gate |
| 中文描述： | 晶闸管敏感门 |
| 文件页数： | 1/6页 |
| 文件大小： | 43K |
| 代理商： | BTA151SERIES |
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
thyristors
intended for use in general purpose
switching
and
applications.
passivated,
in
sensitive
plastic
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
a
envelope,
BTA151-
500R
500
650R
650
800R
800
phase
control
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
7.5
12
100
7.5
12
100
7.5
12
100
A
A
A
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -650R -800R
500
1
650
1
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
I
T(RMS)
RMS on-state current
I
TSM
Non-repetitive peak
on-state current
-
800
V
half sine wave; T
≤
109 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
7.5
12
A
A
-
-
-
-
100
110
50
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
2
5
A
V
V
W
W
C
C
12
5
0.5
150
125
over any 20 ms period
-40
-
a
k
g
1
2
3
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.200
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