参数资料
型号: BTA204W-600B,135
厂商: NXP SEMICONDUCTORS
元件分类: 晶闸管
英文描述: Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
中文描述: 600 V, 1 A, SNUBBERLESS TRIAC
封装: PLASTIC, SOT-223, 4 PIN
文件页数: 1/6页
文件大小: 43K
代理商: BTA204W-600B,135
Philips Semiconductors
Product specification
Three quadrant triacs
BTA204W series B and C
high commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated high commutation triacs in
SYMBOL
PARAMETER
MAX.
MAX. UNIT
a plastic envelope suitable for surface
mounting intended for use in circuits
BTA204W- 500B
600B
800B
where high static and dynamic dV/dt
BTA204W- 500C
600C
800C
and high dI/dt can occur. These
V
DRM
Repetitive peak
500
600
800
V
devices will commutate the full rated
off-state voltages
rms current at the maximum rated
I
T(RMS)
RMS on-state current
1
A
junction temperature without the aid of
I
TSM
Non-repetitive peak on-state
10
A
a snubber.
current
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
1
A
T
sp ≤ 108 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j = 25 C prior to
surge
t = 20 ms
-
10
A
t = 16.7 ms
-
11
A
I
2tI2t for fusing
t = 10 ms
-
0.5
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 1.5 A;
100
A/
s
on-state current after
I
G = 0.2 A;
triggering
dI
G/dt = 0.2 A/s
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
4
1
23
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
s.
December 1998
1
Rev 1.000
相关PDF资料
PDF描述
BTA204W-600C,135 Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600D,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600E,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600F,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 25 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-800E,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 800 V; Package: week 35, 2003
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BTA204W-600C,135 功能描述:双向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态电压: 保持电流(Ih 最大值):45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB
BTA204W-600D 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation
BTA204W-600D /T3 功能描述:双向可控硅 TAPE13 3Q TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态电压: 保持电流(Ih 最大值):45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB