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参数资料
| 型号： | BTA204W-600E,135 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003 |
| 中文描述： | 600 V, 1 A, TRIAC |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 71K |
| 代理商： | BTA204W-600E,135 |
December 1998
3
Rev 1.000
Philips Semiconductors
Product specication
Three quadrant triacs
guaranteed commutation
BTA204W series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
full or half cycle
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted; minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:2
-
70
-
K/W
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
10
25
mA
T2+ G-
-
5
10
25
mA
T2- G-
-
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
6
12
20
mA
T2+ G-
-
9
18
30
mA
T2- G-
-
6
12
20
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
6
12
20
mA
V
T
On-state voltage
I
T = 2 A
-
1.2
1.5
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 C
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...D
...E
...F
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);20
30
50
-
V/
s
off-state voltage
T
j = 125 C; exponential
waveform; gate open
circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
1.0
2.0
2.5
-
A/ms
commutating current
I
T(RMS) = 1 A;
dV
com/dt = 20V/s; gate
open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
5.0
-
A/ms
commutating current
I
T(RMS) = 1 A;
dV
com/dt = 0.1V/s; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 12 A; VD = VDRM(max);-
-
2
-
s
time
I
G = 0.1 A; dIG/dt = 5 A/s
2 Device does not trigger in the T2-, G+ quadrant.
相关PDF资料 |
PDF描述 |
|---|---|
| BTA204W-600F,135 | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 25 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003 |
| BTA204W-800E,135 | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 800 V; Package: week 35, 2003 |
| BTA204X-600B,127 | Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 32, 2004 |
| BTA204X-600C,127 | Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 32, 2004 |
| BTA204X-800C,127 | Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: week 32, 2004 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BTA204W-600F | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA204W-600F /T3 | 功能描述:双向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BTA204W-600F,135 | 功能描述:双向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BTA204W-800B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
| BTA204W-800C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
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