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| 型号： | BTA204X-600F,127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 25 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| 中文描述： | 600 V, 4 A, TRIAC |
| 封装： | PLASTIC, FULL PACK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 75K |
| 代理商： | BTA204X-600F,127 |
9397 750 14491
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2005
2 of 12
Philips Semiconductors
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/
s.
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BTA204X-600D
TO-220F
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 ‘full pack’
SOT186A
BTA204X-600E
BTA204X-600F
BTA204X-800E
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BTA204X-600D
[1] -
600
V
BTA204X-600E
[1] -
600
V
BTA204X-600F
[1] -
600
V
BTA204X-800E
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Ths ≤ 92 °C;
-4
A
ITSM
non-repetitive peak on-state current
full sine wave;
Tj =25 °C prior to surge;
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I2tI2t for fusing
t = 10 ms
-
3.1
A2S
dlT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/s
-
100
A/
s
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
40
+150
°C
Tj
junction temperature
-
125
°C
相关PDF资料 |
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|---|---|
| BTA204X-800E,127 | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| BTA208-600D,127 | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BTA208-600E,127 | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BTA208-600F,127 | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 25 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BTA208-800E,127 | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005 |
相关代理商/技术参数 |
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| BTA204X-800B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
| BTA204X-800C | 功能描述:双向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BTA204X-800C,127 | 功能描述:双向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BTA204X-800C/L03Q | 功能描述:BTA204X-800C/L03/TO-220F/STAND 制造商:ween semiconductors 系列:- 包装:管件 零件状态:在售 三端双向可控硅类型:标准 电压 - 断态:800V 电流 - 通态（It（RMS））（最大值）:4A 电压 - 栅极触发（Vgt）（最大值）:1V 电流 - 不重复浪涌 50，60Hz（Itsm）:25A，27A 电流 - 栅极触发（Igt）（最大值）:35mA 电流 - 保持（Ih）（最大值）:20mA 配置:单一 工作温度:125°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 全封装，隔离接片 供应商器件封装:TO-220F 标准包装:600 |
| BTA204X-800E | 功能描述:双向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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