参数资料
型号: BU15TD2WNVX-TL
厂商: Rohm Semiconductor
文件页数: 1/43页
文件大小: 0K
描述: IC REG LDO 1.5V .2A 4-SSON
标准包装: 5,000
稳压器拓扑结构: 正,固定式
输出电压: 1.5V
输入电压: 1.7 V ~ 5.5 V
稳压器数量: 1
电流 - 输出: 200mA(最小)
电流 - 限制(最小): 220mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 4-UDFN 裸露焊盘
供应商设备封装: SSON004X1010
包装: 带卷 (TR)
Datasheet
CMOS LDO Regulator Series for Portable Equipments
Versatile Package
FULL CMOS LDO Regulator
BUxxTD2WNVX series
● General Description
● Key Specifications
BUxxTD2WNVX series is high-performance FULL CMOS
regulator with 200-mA output, which is mounted on
versatile package SSON004X1010 (1.00mm × 1.00 mm
× 0.60mm). It has excellent noise characteristics and
load responsiveness characteristics despite its low circuit
Output voltage:
Accuracy output voltage:
Low current consumption:
Operating temperature range:
1.0V to 3.4V
±1.0% (±25mV)
35 μ A
-40°C to +85°C
current consumption of 35 μ A. It is most appropriate for
various applications such as power supplies for logic IC,
RF, and camera modules.ROHM’s.
● Applications
Battery-powered portable equipment, etc.
● Package
● Features
High accuracy detection
low current consumption
Compatible with small ceramic capacitor(Cin=Co=0.47uF)
With built-in output discharge circuit
High ripple rejection
ON/OFF control of output voltage
With built-in over current protection circuit
and thermal shutdown circuit
Low dropout voltage
● Typical Application Circuit
SSON004X1010 :
1.00mm x 1.00mm x 0.60mm
STBY
VIN
STBY
VIN
VOUT
VOUT
GND
GND
Fig.1 Application Circuit
GND
○ Product structure:Silicon monolithic integrated circuit
www.rohm.com ? 2013 ROHM Co., Ltd. All rights reserved.
○ This product is not designed protection against radioactive rays.
TSZ02201-0RBR0A300050-1-2
TSZ22111 ? 14 ? 001
1/40
14.Jan.2013.Rev.008
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