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参数资料
| 型号： | BU2515AF |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 9 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, SOT-199, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 62K |
| 代理商： | BU2515AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
C
= 4.5 A; I
B
= 0.9 A
I
C
= 4.5 A; I
= 0.9 A
I
C
= 500 mA; V
= 5 V
I
C
= 4.5 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEsat
V
BEsat
h
FE
h
FE
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
1.0
-
5.0
1.0
-
10.8
mA
V
V
V
7.5
-
-
-
5
13.5
-
-
17.2
8.2
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (56 kHz line
deflection circuit)
CONDITIONS
I
Csat
= 4.5 A; L
= 250
μ
H; C
fb
= 4 nF;
I
=0.65 A; L
= 1.5
μ
H;
-V
BB
= -4 V; -I
BM
= 2.7 A
TYP.
MAX.
UNIT
t
s
t
f
Turn-off storage time
Turn-off fall time
2.2
0.2
3.0
0.4
μ
s
μ
s
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
IC
IB
VCE
ICsat
IBend
18us
8.8us
t
t
t
TRANSISTOR
DIODE
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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PDF描述 |
|---|---|
| BU2515AX | Silicon Diffused Power Transistor |
| BU2515DF | Silicon Diffused Power Transistor |
| BU2515DX | POWERLINE: RP15-S_DEW - 4:1 Wide Input Voltage Range- 15 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 82% |
| BU2520AF | Silicon Diffused Power Transistor |
| BU2520A | RP15 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 15V; 2:1 Wide Input Voltage Range; 15 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 88% |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2515AX | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2515DF | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2515DX | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2520A | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BU2520A/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
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