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参数资料
| 型号： | BU2515DX |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWERLINE: RP15-S_DEW - 4:1 Wide Input Voltage Range- 15 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 82% |
| 中文描述： | 9 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, SOT-399, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 69K |
| 代理商： | BU2515DX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 6 V; I
C
= 0 A
I
B
= 600 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
V
= 6 V
I
C
= 4.5 A; I
B
= 0.9 A
I
C
= 4.5 A; I
B
= 0.9 A
I
C
= 1.0 A; V
CE
= 5 V
I
C
= 4.5 A; V
CE
= 5 V
I
F
= 4.5 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
130
13.5
-
-
-
-
mA
V
V
7.5
800
R
be
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
-
5
-
46
-
-
13
8
-
-
V
V
5.0
1.0
-
10.2
2.2
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (56 kHz line
deflection circuit)
CONDITIONS
I
Csat
= 4.5 A; L
= 250
μ
H; C
fb
= 4 nF;
I
= 0.65 A; L
= 1.5
μ
H;
-V
BB
= -4 V; -I
BM
= 2.7 A
TYP.
MAX.
UNIT
t
s
t
f
V
fr
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
2.2
0.2
17
3.0
0.4
-
μ
s
μ
s
V
I
F
= 4.5 A; dI
F
/dt = 50 A/
μ
s
t
fr
V
F
= 5 V
360
-
ns
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300
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相关代理商/技术参数 |
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| BU2520A | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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| BU2520AF/B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
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