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参数资料
| 型号： | BU25TA2WNVX-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 24/30页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 2.5V .2A 4-SSON |
| 特色产品： | CMOS LDO Regulators |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 2.5V |
| 输入电压： | 2.5 V ~ 5.5 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 200mA（最小值） |
| 电流 - 限制（最小）： | 250mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-UDFN 裸露焊盘 |
| 供应商设备封装： | 4-SSON-EP（1.2x1.6） |
| 包装： | 标准包装 |
| 其它名称： | BU25TA2WNVX-DKR BU25TA2WNVX-DKR-ND BU25TA2WNVXDKR |
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BU ?? TA2WNVX series, BU ?? TA2WHFV series
Technical Note
● About power dissipation (Pd)
As for power dissipation, an approximate estimate of the heat reduction characteristics and internal power consumption of
IC are shown, so please use these for reference. Since power dissipation changes substantially depending on the
implementation conditions (board size, board thickness, metal wiring rate, number of layers and through holes, etc.), it is
recommended to measure Pd on a set board. Exceeding the power dissipation of IC may lead to deterioration of the original
IC performance, such as causing operation of the thermal shutdown circuit or reduction in current capability. Therefore, be
sure to prepare sufficient margin within power dissipation for usage.
Calculation of the maximum internal power consumption of IC (P MAX )
P MAX =(V IN -V OUT )×I OUT (MAX.) (V IN : Input voltage V OUT : Output voltage
Measurement conditions
Evaluation Board 1
(Single-side Board)
40
20
40 20
Layout of Board for
Measurement
(Unit: mm)
Top Layer (Top View)
40
IC Implementation Position
40
Bottom Layer (Top View)
I OUT (MAX): Maximum output current)
Evaluation Board 2
(Double-side Board)
40
20
40 20
Top Layer (Top View)
40
20
40 20
Bottom Layer (Top View)
Measurement State
Board Material
Board Size
Top layer
Wiring Rate
Bottom layer
Through Hole
Power Dissipation
Thermal Resistance
With board implemented (Wind speed 0 m/s)
Glass epoxy resin (Single-side board)
40 mm x 40 mm x 0.8 mm
Metal (GND) wiring rate: Approx. 25%
Metal (GND) wiring rate: Approx 0%
0 holes
1100 mW
θ ja=91 ℃ /W
With board implemented (Wind speed 0 m/s)
Glass epoxy resin (Double-side board)
40 mm x 40 mm x 0.8 mm
Metal (GND) wiring rate: Approx. 25%
Metal (GND) wiring rate: Approx 25%
Diameter 0.5 mm ? 12 holes
1250 mW
θ ja=80 ℃ /W
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
24/29
2011.01 - Rev.C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU25TD2WNVX | 制造商:ROHM 制造商全称:Rohm 功能描述:1ch 200mA CMOS LDO Regulators |
| BU25TD2WNVX-TL | 制造商:ROHM Semiconductor 功能描述:LDO REGULATOR POS 2.5V 0.2A T/R - Tape and Reel 制造商:ROHM Semiconductor 功能描述:IC REG LDO 2.5V 0.2A 4SSON |
| BU25TD3WG-TR | 功能描述:低压差稳压器 - LDO Standard CMOS LDO Vreg; 2.5V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| BU25UA3WNVX-TL | 制造商:ROHM 制造商全称:Rohm 功能描述:Versatile Package FULL CMOS LDO Regulator |
| BU25UB3WG-GTL | 制造商:ROHM 制造商全称:Rohm 功能描述:Versatile Package FULL CMOS LDO Regulator |
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