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参数资料
| 型号： | BU52003GUL-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 4/22页 |
| 文件大小： | 505K |
| 描述： | IC HALL EFFECT SW BIPO VCSP50L1 |
| 特色产品： | ROHM Hall Effect Sensor ICs |
| 标准包装： | 1 |
| 传感范围： | -5.5mT 跳闸，-0.8mT 释放 |
| 类型： | 单极开关 |
| 电源电压： | 2.4 V ~ 3.3 V |
| 电流 - 电源： | 9µA |
| 电流 - 输出（最大）： | ±1mA |
| 输出类型： | 数字，开路集电极 |
| 特点： | 稳压电压 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 4-UFBGA，CSPBGA |
| 供应商设备封装： | VCSP50L1 |
| 包装： | 标准包装 |
| 产品目录页面： | 1377 (CN2011-ZH PDF) |
| 其它名称： | BU52003GUL-E2DKR |
BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV
Technical Note
4/19
www.rohm.com
2010.08 - Rev.C
?2010 ROHM Co., Ltd. All rights reserved.
BU52012NVX (Unless otherwise specified, V
DD
=1.80V, Ta=25)
Parameter
Symbol
Limits
Unit
Conditions
Min.
Typ.
Max.
Power Supply Voltage
V
DD
1.65
1.80
3.60
V
Operate Point
B
opS
-
3.0
5.0
mT
Release Point
B
rpS
0.6
2.1
-
mT
Hysteresis
B
hysS
-
0.9
-
mT
Period
T
P
-
50
100
ms
Output High Voltage
V
OH
V
DD
-0.2
-
-
V
B
rpS
;
9
I
OUT
=-0.5mA
Output Low Voltage
V
OL
-
-
0.2
V
B
opS
<B
;
9
I
OUT
=+0.5mA
Supply Current 1
I
DD1(AVG)
-
3.5
5.5
礎
V
DD
=1.8V, Average
Supply Current
During Startup Time 1
I
DD1(EN)
-
2.8
-
mA
V
DD
=1.8V,
During Startup Time Value
Supply Current
During Standby Time 1
I
DD1(DIS)
-
1.8
-
礎
V
DD
=1.8V,
During Standby Time Value
Supply Current 2
I
DD2(AVG)
-
8.0
12.5
礎
V
DD
=3.0V, Average
Supply Current
During Startup Time 2
I
DD2(EN)
-
5.3
-
mA
V
DD
=3.0V,
During Startup Time Value
Supply Current
During Standby Time 2
I
DD2(DIS)
-
5.2
-
礎
V
DD
=3.0V,
During Standby Time Value
;9. B = Magnetic flux density
1mT=10Gauss
Positive ( + ) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (T
P
) to become definite output.
Radiation hardiness is not designed.
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