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参数资料
| 型号： | BU52014HFV-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 6/14页 |
| 文件大小： | 477K |
| 描述： | IC HALL EFFECT SW BIPO HVSOF5 |
| 特色产品： | ROHM Hall Effect Sensor ICs |
| 标准包装： | 1 |
| 传感范围： | ±5mT 跳闸，±0.6mT 释放 |
| 类型： | 全极开关 |
| 电源电压： | 1.65 V ~ 3.3 V |
| 电流 - 电源： | 8µA |
| 电流 - 输出（最大）： | ±0.5mA |
| 输出类型： | 数字，开路集电极 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | SOT-665 |
| 供应商设备封装： | 5-HVSOF |
| 包装： | 标准包装 |
| 其它名称： | BU52014HFV-DKR BU52014HFV-DKR-ND BU52014HFVDKR |
BU52004GUL, BU52014HFV
Technical Note
6/11
www.rohm.com
2010.01 - Rev.D
?2010 ROHM Co., Ltd. All rights reserved.
? Description of Operations
Micropower Operation (Small current using intermittent action)
(Offset Cancelation)
(Magnetic Field Detection Mechanism)
The dual output bipolar detection Hall IC adopts an
intermittent operation method to save energy. At startup, the
Hall elements, amp, comparator and other detection circuits
power ON and magnetic detection begins. During standby,
the detection circuits power OFF, thereby reducing current
consumption. The detection results are held while standby
is active, and then output.
Reference period: 50ms (MAX100ms)
Reference startup time: 48約
I
DD
Standby
Startup time
Period 50ms
t
Fig.20
The Hall elements form an equivalent Wheatstone (resistor)
bridge circuit. Offset voltage may be generated by a
differential in this bridge resistance, or can arise from
changes in resistance due to package or bonding stress. A
dynamic offset cancellation circuit is employed to cancel this
offset voltage.
When Hall elements are connected as shown in Fig. 21 and a
magnetic field is applied perpendicular to the Hall elements,
voltage is generated at the mid-point terminal of the bridge.
This is known as Hall voltage.
Dynamic cancellation switches the wiring (shown in the
figure) to redirect the current flow to a 90? angle from its
original path, and thereby cancels the Hall voltage.
The magnetic signal (only) is maintained in the sample/hold
circuit during the offset cancellation process and then
released.
GND
V
DD
I
B
?
Hall Voltage
Fig.21
The Hall IC cannot detect magnetic fields that run horizontal to the package top layer.
Be certain to configure the Hall IC so that the magnetic field is perpendicular to the top layer.
Fig.22
S
S
N
S
N
S
N
Flux direction
Flux direction
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU52014HFV-TR-CUT TAPE | 制造商:ROHM 功能描述:BU52014HFV Series 3.3 V ?0.5 mA SMT Omnipolar Detection Hall IC - HVSOF-5 |
| BU52015GUL | 制造商:ROHM 制造商全称:Rohm 功能描述:Omnipolar Detection Hall ICs |
| BU52015GUL-E2 | 功能描述:板机接口霍耳效应/磁性传感器 1.65-3.3V; +/-3.0mT Bipolar Detection RoHS:否 制造商:Honeywell 类型:Bipolar Hall-Effect Digital Position Sensor 工作电源电压:3 V to 24 V 电源电流:3.5 mA 最大输出电流:20 mA 工作点最小值/最大值:5 G, 55 G 最小/最大释放点（Brp）:- 55 G, - 5 G 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 |
| BU52021HFV | 制造商:ROHM 制造商全称:Rohm 功能描述:Omnipolar Detection Hall ICs |
| BU52021HFV-TR | 功能描述:工业霍耳效应/磁性传感器 ULTRA SMALL DETECT SENSOR; 2.4-3.6V RoHS:否 制造商:Honeywell 操作类型: 操作高斯: 工作电源电压: 电流额定值: 封装 / 箱体: 输出下降时间: 工作点最小值/最大值: 安装风格: 最大工作温度: 最小工作温度: 最大输出电流: 封装: |
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