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| 型号： | BU52051NVX-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 23/34页 |
| 文件大小： | 678K |
| 描述： | IC LATCH SENSOR BIPO CMOS 4SSON |
| 标准包装： | 1 |
| 传感范围： | ±5mT 跳闸，±0.6mT 释放 |
| 类型： | 全极开关 |
| 电源电压： | 1.65 V ~ 3.3 V |
| 电流 - 电源： | 8µA |
| 电流 - 输出（最大）： | ±0.5mA |
| 输出类型： | 数字，开路集电极 |
| 特点： | 稳压电压 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 4-UDFN 裸露焊盘 |
| 供应商设备封装： | SSON004X1216 |
| 包装： | 标准包装 |
| 其它名称： | BU52051NVX-DKR BU52051NVX-DKR-ND BU52051NVXDKR |
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Technical Note
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52053NVX,
BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
23/31
www.rohm.com
2011.12 - Rev.G
?2011 ROHM Co., Ltd. All rights reserved.
螪escription of Operations
(Micropower Operation)
(Offset Cancelation)
The bipolar detection Hall IC adopts an intermittent operation method
to save energy. At startup, the Hall elements, amp, comparator and
other detection circuits power ON and magnetic detection begins.
During standby, the detection circuits power OFF, thereby reducing
current consumption. The detection results are held while standby is
active, and then output.
Reference period: 50ms (MAX100ms)
Reference startup time: 48祍
;BD7411G dont adopts an intermittent operation method.
Fig.65
The Hall elements form an equivalent Wheatstone (resistor) bridge
circuit. Offset voltage may be generated by a differential in this bridge
resistance, or can arise from changes in resistance due to package or
bonding stress. A dynamic offset cancellation circuit is employed to
cancel this offset voltage.
When Hall elements are connected as shown in Fig. 66 and a
magnetic field is applied perpendicular to the Hall elements, voltage is
generated at the mid-point terminal of the bridge. This is known as Hall
voltage.
Dynamic cancellation switches the wiring (shown in the figure) to
redirect the current flow to a 90? angle from its original path, and
thereby cancels the Hall voltage.
The magnetic signal (only) is maintained in the sample/hold circuit
during the offset cancellation process and then released.
+
GND
V
DD
I
B
?
Hall Voltage
Fig.66
I
DD
Standby time
Startup time
Period
t
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU52053NVX | 制造商:ROHM 制造商全称:Rohm 功能描述:Omnipolar Detection Hall ICs |
| BU52053NVX-TR | 功能描述:板机接口霍耳效应/磁性传感器 Omnipolar Detection Hall IC RoHS:否 制造商:Honeywell 类型:Bipolar Hall-Effect Digital Position Sensor 工作电源电压:3 V to 24 V 电源电流:3.5 mA 最大输出电流:20 mA 工作点最小值/最大值:5 G, 55 G 最小/最大释放点（Brp）:- 55 G, - 5 G 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 |
| BU52054GWZ | 制造商:ROHM 制造商全称:Rohm 功能描述:Omnipolar Detection Hall ICs |
| BU52054GWZ-E2 | 功能描述:板机接口霍耳效应/磁性传感器 Hall Effect Sensor 0.5mA Omnipolar RoHS:否 制造商:Honeywell 类型:Bipolar Hall-Effect Digital Position Sensor 工作电源电压:3 V to 24 V 电源电流:3.5 mA 最大输出电流:20 mA 工作点最小值/最大值:5 G, 55 G 最小/最大释放点（Brp）:- 55 G, - 5 G 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 |
| BU52055GWZ | 制造商:ROHM 制造商全称:Rohm 功能描述:Omnipolar Detection Hall ICs |
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