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参数资料
| 型号： | BUK9240-100A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-252AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|第33A条（丁）|对252AA |
| 文件页数： | 6/13页 |
| 文件大小： | 291K |
| 代理商： | BUK9240-100A |
Philips Semiconductors
BUK9240-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 03 October 2000
2 of 13
9397 750 07573
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
IDM is limited by chip, not package.
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
100
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
33
A
Ptot
total power dissipation
Tmb =25 °C
114
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS =5V; ID = 25 A
34
40
m
VGS = 4.5 V; ID = 25 A
44.6
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
100
V
VDGR
drain-gate voltage (DC)
RGS =20k
100
V
VGS
gate-source voltage (DC)
±10
V
VGSM
non-repetitive gate-source voltage
tp ≤ 50 s
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
Figure 2 and 3
33
A
Tmb = 100 °C; VGS =5V; Figure 2
23.8
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
Figure 3
135
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
114
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
33
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
135
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =25A;
VDS ≤ 100 V; VGS =5V; RGS =50 ;
starting Tj =25 °C
31
mJ
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相关代理商/技术参数 |
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| BUK9240-100A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK9240-100A/C1,11 | 功能描述:MOSFET TranMOSFET N-CH 100V 33A 3-Pin(2+Tab)DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK9240-100A118 | 制造商:NXP Semiconductors 功能描述:N CH MOSFET TRENCH AUTOMOTIVE 100V 33 |
| BUK9245-55A | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS logic level FET |
| BUK9245-55A /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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