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参数资料
| 型号： | BUZ53A |
| 英文描述： | Fully integrated RF front-end receiver for GPS applications |
| 中文描述： | 晶体管| MOSFET的| N沟道| 1KV交五（巴西）直| 2.6AI（四）|对204AA |
| 文件页数： | 1/2页 |
| 文件大小： | 26K |
| 代理商： | BUZ53A |
PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
TYPE: BUZ53A
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE: TO-204AA (TO-3)
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
VDSS
1000
Vdc
Drain – Gate Voltage
VDGR
1000
Vdc
Drain Current – Continuous
ID
2.6
Adc
Drain Current – Pulsed
IDM
10
Adc
Gate – Source Voltage
VGS
±20
Vdc
Power Dissipation
PD
78
Watts
Inductive Current
IL
Adc
Operating and Storage Temperature
TJ & Tstg
-55 to +150
°C
Lead Temperature From Case
TL
°C
ELECTRICAL CHARACTERISTICS TA @ 25
°°C
Parameters
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain Source
Breakdown Voltage
BVDSS
VGS = 0V, ID = .25mA
1000
Vdc
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 1.0mA
2.1
4.0
Vdc
Gate – Body Leakage
Current
IGSS
VGS =
± 20V, V
DS = 0V
100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS = 1000V, VGS = 0V,
VDS = 1000V, VGS = 0V, TJ = 125
°C
0.25
1.0
mA
On State Drain Current
ID(on)
Adc
Drain Source On-
Resistance
rDS(on)
VGS = 10V, ID = 1.5A
5.0
Ohms
Forward
Transconductance
gFS
VDS = 25V, ID = 1.5A
0.7
mhos
Drain-Source On
Voltage
VDS(on)
Vdc
Drain-Source-On
Voltage
VDS(on)
Vdc
Input Capacitance
Ciss
2100
pF
Output Capacitance
Coss
120
pF
Reverse Transfer
Capacitance
Crss
VGS = 0V, VDS = 25V, f = 1 MHz
55
pF
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