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| 型号： | BVSS84LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 50V 130MA SOT-23-3 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 130mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 100mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | * |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
BSS84L, BVSS84L
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = ? 250 m Adc)
Zero Gate Voltage Drain Current
(V DS = ? 25 Vdc, V GS = 0 Vdc)
(V DS = ? 50 Vdc, V GS = 0 Vdc)
(V DS = ? 50 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
? 50
?
?
?
?
?
?
?
?
?
?
? 0.1
? 15
? 60
± 10
Vdc
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate ? Source Threaded Voltage (V DS = V GS , I D = ? 250 m A)
Static Drain ? to ? Source On ? Resistance (V GS = ? 5.0 Vdc, I D = ? 100 mAdc)
Transfer Admittance (V DS = ? 25 Vdc, I D = ? 100 mAdc, f = 1.0 kHz)
V GS(th)
R DS(on)
|y fs |
? 0.9
?
50
?
4.7
?
? 2.0
10
?
Vdc
W
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
V DS = 5.0 Vdc
V DS = 5.0 Vdc
V DG = 5.0 Vdc
C iss
C oss
C rss
?
?
?
36
17
6.5
?
?
?
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
3.6
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
V DD = ? 15 Vdc, I D = ? 2.5 Adc,
R L = 50 W
t r
t d(off)
t f
?
?
?
9.7
12
1.7
?
?
?
Gate Charge
V DD = ? 40 Vdc, I D = ? 0.5 A,
V GS = ? 10 V
Q T
?
2.2
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
I S
I SM
?
?
?
?
? 0.130
? 0.520
A
Forward Voltage (Note 2)
V GS = 0 V, I S = ? 130 mA
V SD
?
?
? 2.2
V
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
0.5
0.4
V DS = 10 V
- 55 ° C
25 ° C
150 ° C
0.5
0.45
0.4
0.35
T J = 25 ° C
V GS = -3.5 V
-3.25 V
0.3
-3.0 V
0.3
0.25
0.2
-2.75 V
0.2
0.15
0.1
0.1
0.05
-2.5 V
-2.25 V
0
1
1.5 2 2.5 3
3.5
4
0
0
1
2
3
4
5
6
7
8
9
10
-V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
http://onsemi.com
2
-V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On ? Region Characteristics
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