参数资料
型号: BY251P-E3/54
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 63K
描述: DIODE 3A 200V DO-201AD
标准包装: 1,400
二极管类型: 标准
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 3A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 3µs
电流 - 在 Vr 时反向漏电: 5µA @ 200V
安装类型: 通孔
封装/外壳: DO-201AD,轴向
供应商设备封装: DO-201AD
包装: 带卷 (TR)
BY251 P thru BY255P
Vishay General Semiconductor
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THERMAL cHARAcTE sT cs (TA 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
N ateW Thermal resistance from junction to ambient and from junction to lead at 0.375“ (9.5 mm) lead length, P.C.B. mounted
ORDERING IIIFoRMATioN (Example)
PREFERRED P/N
UNIT WEIGHT (9) PREFERRED PACKAGE CODE
DELIVERY MODE
BY253F'-E3/54
13" diameter paper tape and reel
BY2 53P-E3/ 73
Ammo pack packaging
RATINGS AND cHARAcTERIsTIcs cuRvEs(TA : 25 °C unless otherwise noted)
60 Hz Resistive
or inductive Load
Average Forward Rectilied Current (A)
u 25 50 75 100 125 150
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
1000
100
Peak Forward Surge Current (A)
Number oi Cycles at 60 Hz
175
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
lnstantaneous Reverse Leakage
Current (uA)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Maximum Non-repetitive Peak Fonivard Surge Current
100
G
instantaneous Forward Current (A)
0.6 0.7 0.0 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Document Number: 88838Revision: 04-Nov-09
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