参数资料
型号: BYX10GP-E3/73
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 65K
描述: DIODE 2A 1600V SMC
标准包装: 3,000
二极管类型: 标准
电压 - (Vr)(最大): 1600V(1.6kV)
电流 - 平均整流 (Io): 360mA
电压 - 在 If 时为正向 (Vf)(最大): 1.6V @ 2A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 2µs
电流 - 在 Vr 时反向漏电: 1µA @ 1600V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL(DO-41)
包装: 带盒(TB)
‘Ill!7 www'ViShay'C°m Vishay General Semiconductor
ELEcTRIcAL cHARAcTERIsTIcS (TA = 25 0C unless otherwise noted)
PARAMETER TEST CONDITIONS BYx1oGPMaximum peak reverse current at rated peak V 00 V
Maximum instantaneous forward voltage
working reverse voltage RWMTypical reverse recovery time IF : 0.5 A, In : 1.0 A, I" : 0.25 A
Typical junction capacitance VR : 4.0 V, 1 MHZ
N atesRATINGS AND cHARAcTERIsTIcs cuRvEs (TC = 25 ac unless otherwise noted)
(i) Pulse test: 300 us pulse width, 1 % duty cycle
(2) Pulse test: Pulse width g 40 ms
THERMAL cHARAcTERISTIcs (To = 25 0C unless otherwise noted)
PARAMETER BYX10GP
Typica' therma' resistance 1
Note
ll) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
PREFERRED P/N
BYx1oGP-E3/54
BYX10GPHE3/54 H)
N ate
ii) AEC-Q101 qumnied
15
5 T J : 150 “c
E 3 to rns single Hair Sinewave
&’ :E E3E O 10: a)
6 90) 3
D: U)
M (U
E E I. II
E E 5 7-.
o 0
IL Single Phase HaII—Wave u.
9") . 50 Hz Resistive or Inductive Load §
g 0.375: (9.5 mm) Lead Length g0 020 40 so so 100 120 I40 160 150 1 10 100
5
Ambient Temperature (°C) Number 0' Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 12-Dec-13 2 Document Number: 89112
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@Vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.oom/doc?91000
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