- 您现在的位置：买卖IC网 > PDF目录298895 > BZW04P102 (VISHAY SEMICONDUCTORS) 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL PDF资料下载
参数资料
| 型号： | BZW04P102 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| 封装： | PLASTIC, DO-41, 2 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 66K |
| 代理商： | BZW04P102 |
BZW04P-5V8 thru BZW04-376
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88316
4
08-Jul-03
0
25
50
75
100
0
75
25
50
100
125
150
175
200
P
eak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PPM
)
Der
ating
in
P
ercentage
,%
TA -- Ambient Temperature (
°C)
1
5
10
50
100
Fig. 2 -- Pulse Derating Curve
Fig. 6 -- Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I FSM
-
-P
eak
F
orw
ard
Surge
Current
(A)
Number of Cycles at 60 Hz
C
J-
-J
unction
Capacitance
(pF)
10
100
1000
10,000
100
10
1
1000
V(BR) -- Breakdown Voltage (V)
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
10
50
100
200
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
td
Fig. 3 -- Pulse Waveform
PM
(A
V)
,Steady
State
P
o
w
er
Dissipation
(W)
TJ = 25
°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of IPPM
0
1.0
2.0
3.0
4.0
t -- Time (ms)
Fig. 5 -- Steady State Power Derating Curve
0
50
100
150
I PPM
--
P
eak
Pulse
Current,
%
I
RSM
tr = 10
sec.
Half Value – IPPM
2
10/1000
sec. Waveform
as defined by R.E.A.
Peak Value
IPPM
0
0.25
0.50
0.75
1.00
0
75
25
100
125
150
175
200
Fig. 7 --Typical Reverse Leakage Characteristics
TL -- Lead Temperature (
°C)
50
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
I D
--
Instantaneous
Re
v
erse
Leakage
Current
(
A)
0.01
0.1
10
100
1
0
100
200
V(BR) -- Breakdown Voltage (V)
300
400
500
Measured at Devices
Stand-off Voltage, VWM
TA = 25
°C
L = 0.375" (9.5mm)
Lead Lengths
60 HZ Resistive or
Inductive Load
Fig. 4 -- Typical Junction Capacitance
0.1
s
1.0
s10s
100
s
1.0ms
10ms
P
PPM
--
P
eak
Pulse
P
o
w
er
(kW)
100
10
1
0.1
td -- Pulse Width (sec.)
Fig. 1 – Peak Pulse Power Rating Curve
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
相关PDF资料 |
PDF描述 |
|---|---|
| BZW04P110B | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| BZW04-299BRL | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 |
| BZW04P23B | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41 |
| BZW04-53 | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41 |
| BZW06-188BRL | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BZW04P102B | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:TRANSZORB? Transient Voltage Suppressors |
| BZW04P10B | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:TRANSIENT VOLTAGE SUPPRESSOR |
| BZW04P10B/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 10V 7% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| BZW04P10B/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 10V 7% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| BZW04P10B/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 10V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。