参数资料
型号: BZX84-C47/T3
厂商: NXP SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 47 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 34/54页
文件大小: 1912K
代理商: BZX84-C47/T3
2003 Apr 10
4
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX84 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
200
mA
IZSM
non-repetitive peak reverse current
tp = 100 μs; square wave;
Tj = 25 °C prior to surge
see Tables
1 and 2
Ptot
total power dissipation
Tamb = 25 °C; note 1
250
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 μs; square wave;
Tj = 25 °C prior to surge; see Fig.2
40
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 10 mA; see Fig.3
0.9
V
IR
reverse current
BZX84-A/B/C2V4
VR = 1 V
50
μA
BZX84-A/B/C2V7
VR = 1 V
20
μA
BZX84-A/B/C3V0
VR = 1 V
10
μA
BZX84-A/B/C3V3
VR = 1 V
5
μA
BZX84-A/B/C3V6
VR = 1 V
5
μA
BZX84-A/B/C3V9
VR = 1 V
3
μA
BZX84-A/B/C4V3
VR = 1 V
3
μA
BZX84-A/B/C4V7
VR = 2 V
3
μA
BZX84-A/B/C5V1
VR = 2 V
2
μA
BZX84-A/B/C5V6
VR = 2 V
1
μA
BZX84-A/B/C6V2
VR = 4 V
3
μA
BZX84-A/B/C6V8
VR = 4 V
2
μA
BZX84-A/B/C7V5
VR = 5 V
1
μA
BZX84-A/B/C8V2
VR = 5 V
700
nA
BZX84-A/B/C9V1
VR = 6 V
500
nA
BZX84-A/B/C10
VR = 7 V
200
nA
BZX84-A/B/C11
VR = 8 V
100
nA
BZX84-A/B/C12
VR = 8 V
100
nA
BZX84-A/B/C13
VR = 8 V
100
nA
BZX84-A/B/C15 to 75
VR = 0.7VZnom
50
nA
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