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参数资料
| 型号： | BZX99-BC12 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 12 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 文件页数： | 3/8页 |
| 文件大小： | 53K |
| 代理商： | BZX99-BC12 |
1999 May 31
3
Philips Semiconductors
Product specication
Voltage regulator diodes
BZX99 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX99-C series
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
300
mA
IZSM
non-repetitive peak reverse current
tp = 100 s; square wave;
Tamb =25 °C prior to surge
see Table 1
Ptot
total power dissipation
Tamb =25 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 10 mA; see Fig.4
0.9
V
IF = 100 mA; see Fig.4
1
V
IR
reverse current
BZX99-A/B/C2V4
VR = 1 V
0.2
A
BZX99-A/B/C2V7
VR = 1 V
0.05
A
BZX99-A/B/C3V0
VR = 1 V
0.02
A
BZX99-A/B/C3V3
VR =2V
2
A
BZX99-A/B/C3V6
VR =2V
1
A
BZX99-A/B/C3V9
VR = 2 V
0.5
A
BZX99-A/B/C4V3
VR = 2 V
0.1
A
BZX99-A/B/C4V7
VR =3V
2
A
BZX99-A/B/C5V1
VR =3V
1
A
BZX99-A/B/C5V6
VR =4V
1
A
BZX99-A/B/C6V2
VR = 5 V
0.1
A
BZX99-A/B/C6V8
VR = 5 V
0.01
A
BZX99-A/B/C7V5
VR = 5 V
0.1
A
BZX99-A/B/C8V2
VR = 6 V
0.2
A
BZX99-A/B/C9V1
VR = 7 V
0.1
A
BZX99-A/B/C10
VR = 7 V
0.1
A
BZX99-A/B/C11
VR = 8 V
0.05
A
BZX99-A/B/C12
VR = 9 V
0.05
A
BZX99-A/B/C13
VR = 10 V
0.05
A
BZX99-A/B/C15
VR = 10.5 V
0.01
A
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