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| 型号： | C124G102D5CX5CP |
| 厂商： | KEMET Corporation |
| 英文描述： | MILITARY SPECIFCATIONS ON BACK |
| 中文描述： | 背面军事SPECIFCATIONS |
| 文件页数： | 5/40页 |
| 文件大小： | 509K |
| 代理商： | C124G102D5CX5CP |
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KEMET Electronics Corporation, P.O. Box 5928, Greenville, S.C. 29606, (864) 963-6300
5
EIA RS-198D, Method 303, Condition A (2.2 kg)
ELECTRICAL @ 25°C
Capacitance:
Within specified tolerance at 25°C and following
test conditions.
C0G - Greater than 1000 pF with 1.0 vrms at 1 kHz.
- 1000 pF and less with 1.0 vrms at 1 MHz.
X7R - with 1.0 vrms at 1 kHz.
Z5U - with 0.5 vrms at 1 kHz.
Dissipation Factor:
At 25°C - same test conditions as capacitance.
C0G - 0.15% maximum
X7R - 2.5% maximum
Z5U - 4.0% maximum
Insulation Resistance:
EIA RS-198D, Method 104, Condition A
C0G - 100 gigohms or 1000 megohm x μF,
whichever is less.
X7R -100 gigohms or 1000 megohm x μF,
whichever is less.
Z5U -10 gigohms or 1000 megohm x μF,
whichever is less.
Dielectric Withstanding Voltage:
EIA RS-198D, Method 103 (250% of rated voltage
for 5 seconds, with current limited to 50mA)
ENVIRONMENTAL
Vibration:
EIA RS-198D, Method 304, Condition D (10-2000
Hz; 20g)
Shock:
EIA RS-198D, Method 305, Condition I (100g)
EIA RS-198D, Method 204, Condition A (10 cycles
without applied voltage.
Post-Test Limits at + 25°C are:
Capacitance Change:
C0G - 3%, or 0.25 pF, whichever is greater.
X7R - ± 20% of initial value.
(2)
Z5U - ± 30% of initial value.
(2)
Dissipation Factor:
C0G - 0.25% maximum
X7R - 3.0% maximum
Z5U - 4.0% maximum
Insulation Resistance:
C0G- 10 gigohms or 100 megohm x μF,
whichever is less.
X7R - 10 gigohms or 100 megohm x μF,
whichever is less.
Z5U - 1 gigohm or 100 megohm x μF,
whichever is less.
Thermal Shock:
EIA RS-198D, Method 202, Condition B (C0G &
X7R: - 55°C to + 125°C; Z5U: - 55°C to + 85°C)
(1)
+53 ppm -30 ppm/°C from + 25°C to - 55°C, ± 60
ppm below 10 pF.
X7R & Z5U dielectrics exhibit aging characteristics;
therefore, it is highly recommended that capacitors
be deaged for 2 hours at 150°C and stabilized at
room temperature for 48 hours before capacitance
measurements are made.
(2)
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