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参数资料
| 型号： | C20C |
| 英文描述： | Turbo 2 ultrafast high voltage rectifier |
| 中文描述： | 混合信号CMOS工艺和专门模拟 |
| 文件页数： | 1/2页 |
| 文件大小： | 47K |
| 代理商： | C20C |
Process Parameters
2μm
(5 volts & 3volts)
Units
Metal I pitch (width / space)
2 / 2
μ
m
Metal II pitch (width / space)
2.6 / 2.4
μ
m
Poly pitch (width / space)
2 / 2
μ
m
Contact
2 x 2
μ
m
Via
2.4 x 2.4
μ
m
Gate geometry
2
μ
m
P-well junction depth
4
μ
m
N+ junction depth
0.20
μ
m
P+ junction depth
0.28
μ
m
Gate oxide thickness
325
Inter poly oxide thick.
500
MOSFET Electrical parameters
Electrical
Parameters
N Channel
min. typ. max.
Features
Double Poly / Double Metal
4
μ
m Poly and Metal 1 Pitch
320 ps Delay per stage (Ring Osc.)
5.5 Volts Maximum Operating Voltage
2.7~3.6 Volts Low Voltage Option
Shrinkable to Mitel 1.5
μ
m Process
ProToDuction
TM
Option for low cost prototypes
150mm Wafers
Description
The 2
μ
m P-Well process provides flexibility, speed and pack-
ing density needed in mixed signal designs. The aggressive de-
sign rules make it comparable to most 1.5
μ
m processes. Also,
the MOSFET transistors are designed with very shallow source-
drain junctions and a thin gate oxide to improve speed. A low
voltage option is available for 3 volts applications. It offers low
and matched threshold voltages for improved dynamic range
needed in mixed analog/digital applications.
2 Micron CMOS Process Family
Process parameters
2 MICRON - 5 volts
2 MICRON - 3 volts
Units
Conditions
P Channel
min. typ. max.
N Channel
min. typ. max.
P Channel
min. typ. max.
Vt (10x
2μ
m)
0.55
0.70
0.85
0.55
0.70
0.85
0.35
0.50
0.65
0.35
0.50
0.65
V
saturation
Ids (10x
2μ
m)
160
70
175
80
μA/μm
Vds=Vgs=5volts
Gain
β
(10x
2μ
m)
325
120
325
120
μA/V
2
Body Factor
(50x50
μ
m)
0.40
0.40
0.35
0.35
Dv
Bvdss
10
12
10
13
10
12
10
13
V
Ids=100nA
Subthreshold Slope
100
100
mV/dec.
Vds=0.1v
Substrate Current
0.25
0.34
0.25
0.34
μA/μm
Vds=5.5v; Vgs=2.7v
Field Threshold
10
18
10
17
10
18
10
17
V
Ids = 14μA
L Effective
1.8
1.7
1.8
1.7
μm
L drawn = 2μm
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l’Aéroport
Bromont, Québec, Canada
J2L 1S7
Tel :
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
email: dalsasales@dalsasemi.com
Fax
www.dalsasemi.com
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