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参数资料
| 型号： | C5552 |
| 厂商： | Panasonic Corporation |
| 英文描述： | Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
| 中文描述： | 硅npn型三重扩散（水平偏转输出台地型） |
| 文件页数： | 1/1页 |
| 文件大小： | 46K |
| 代理商： | C5552 |
Power Transistors
2SC5552
Silicon NPN triple diffusion mesa type
1
For horizontal deflection output
I
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
I
Absolute Maximum Ratings
T
C
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CES
1 700
V
Collector to emitter voltage
1 700
V
V
CEO
V
EBO
I
CP
600
V
Emitter to base voltage
7
V
Peak collector current
30
A
Collector current
I
C
I
B
P
C
16
8
A
Base current
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
65
W
3.5
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
I
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
1 000 V, I
E
=
0
V
CB
=
1 700 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
8 A
I
C
=
8 A, I
B
=
2 A
I
C
=
8 A, I
B
=
2 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
8 A, Resistance loaded
I
B1
=
2 A, I
B2
=
4 A
50
μ
A
1
mA
Emitter cutoff current
I
EBO
h
FE
50
μ
A
Forward current transfer ratio
6
12
Collector to emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
3
V
Base to emitter saturation voltage
1.5
V
Transition frequency
3
MHz
Storage time
t
stg
t
f
3.0
μ
s
μ
s
Fall time
0.2
15.5
±0.5
3.0
±0.3
5
°
(4.0)
2.0
±0.2
1.1
±0.1
5.45
±0.3
0.7
±0.1
5
°
5
°
5
°
5
°
10.9
±0.5
1
5
°
2
3
(
(
(
S
3
±
5
±
(
2
±
(
2
±
1
±
(
φ
3.2
±0.1
(
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
B
C
E
Marking Symbol: C5552
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