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参数资料
| 型号： | C62702-C855 |
| 厂商： | SIEMENS AG |
| 英文描述： | NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
| 中文描述： | NPN硅达林顿晶体管（高电流增益低集电极发射极饱和电压 |
| 文件页数： | 1/4页 |
| 文件大小： | 173K |
| 代理商： | C62702-C855 |
Semiconductor Group
1
NPN Silicon Darlington Transistors
BC 875
… BC 879
5.91
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
1
BC 875
BC 877
BC 879
C62702-C853
C62702-C854
C62702-C855
–
TO-92
E
C
B
2
3
1)
For detailed information see chapter Package Outlines.
2)
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
×
10 mm large copper area for
the collector terminal,
R
thJA
= 125 K/W and thus
P
tot max
= 1 W at
T
A
= 25 C.
3)
Mounted on Al heat sink 15 mm
×
25 mm
×
0.5 mm.
Parameter
Symbol
Values
BC 875
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
V
CE0
V
Peak collector current
Base current
Peak base current
I
CM
Collector current
I
C
A
Junction temperature
Storage temperature range
T
j
C
Total power dissipation,
T
C
= 90 C
2)
P
tot
W
T
stg
V
CB0
Thermal Resistance
Junction - ambient
2)
Junction - case
3)
R
th JA
≤
156
K/W
1
2
0.8 (1)
150
– 65 … + 150
V
EB0
I
B
mA
100
200
45
60
60
80
BC 877
I
BM
80
100
BC 879
5
R
th JC
≤
75
G
High current gain
G
Low collector-emitter saturation voltage
G
Complementary types: BC 876, BC 878
BC 880 (PNP)
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