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参数资料
| 型号： | C62702-C942 |
| 厂商： | SIEMENS AG |
| 英文描述： | PNP Silicon Darlington Transistors (High current gain High collector current) |
| 中文描述： | 进步党硅达林顿晶体管（高电流增益高集电极电流） |
| 文件页数： | 2/4页 |
| 文件大小： | 170K |
| 代理商： | C62702-C942 |
Semiconductor Group
2
BC 876
… BC 880
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
I
C
= 150 mA;
V
CE
= 10 V
1)
I
C
= 500 mA;
V
CE
= 10 V
1)
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 0.5 mA
I
C
= 1000 mA,
I
B
= 1 mA
V
Collector-emitter breakdown voltage
I
C
= 50 mA
BC 876
BC 878
BC 880
V
(BR)CE0
45
60
80
–
–
–
–
–
–
nA
μ
A
nA
Collector cutoff current
V
CB
=
V
CBmax
V
CB
=
V
CBmax
,
T
A
= 150 C
Emitter cutoff current,
V
EB
= 4 V
I
CB0
–
–
–
–
–
–
100
20
100
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
μ
A
BC 876
BC 878
BC 880
V
(BR)CB0
60
80
100
5
–
–
–
–
–
–
–
–
–
–
500
Emitter-base breakdown voltage,
I
E
= 100
μ
A
Collector cutoff current
V
CE
= 0.5
×
V
CEmax
V
(BR)EB0
–
h
FE
1000
2000
–
–
–
–
Base-emitter saturation voltage
1)
I
C
= 1000 mA;
I
B
= 1 mA
V
BEsat
–
–
2.2
I
EB0
MHz
Transition frequency
I
C
= 200 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
–
150
–
AC characteristics
V
V
CEsat
–
–
–
–
1.3
1.8
I
CE0
1)
Pulse test:
t
≤
300
μ
s,
D
≤
2 %.
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