参数资料
型号: C67040-A4207-A2
厂商: SIEMENS AG
英文描述: IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated)
中文描述: IGBT的(高开关速度非常低开关损耗低尾电流的无闩锁雪崩额定)
文件页数: 2/7页
文件大小: 59K
代理商: C67040-A4207-A2
Semiconductor Group
2
Feb-07-1997
BUP 314S
Preliminary data
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
Symbol
-
Values
E
Unit
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC
0.42
K/W
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Collector-emitter breakdown voltage
V
GE
= 0 V, I
C
= 0.3 mA, T
j
= 25 °C
Gate threshold voltage
V
GE
= V
CE,
I
C
= 0.35 mA, T
j
= 25 °C
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 15 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 15 A, T
j
= 125 °C
V
GE
= 15 V, I
C
= 30 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 30 A, T
j
= 125 °C
Zero gate voltage collector current
V
(BR)CES
1200
-
-
V
V
GE(th)
4.5
5.5
6.5
V
CE(sat)
-
-
-
-
6.6
8
4.6
5.5
-
-
-
7.6
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 25 °C
Gate-emitter leakage current
I
CES
-
-
0.8
mA
V
GE
= 25 V, V
CE
= 0 V
I
GES
-
-
100
nA
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