参数资料
型号: C67070-A2120-A67
厂商: SIEMENS AG
英文描述: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
中文描述: IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包)
文件页数: 1/9页
文件大小: 127K
代理商: C67070-A2120-A67
Semiconductor Group
1
Apr-25-1997
BSM 400 GB 60 DN2
IGBT Power Module
Preliminary data
Half-bridge
Including fast free-wheeling diodes
Package with insulated metal base plate
Type
V
CE
600V
I
C
475A
Package
Ordering Code
BSM 400 GB 60 DN2
HALF-BRIDGE 2
C67070-A2120-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
Symbol
V
CE
V
CGR
Values
600
Unit
V
600
± 20
V
GE
I
C
DC collector current
T
C
= 25 °C
T
C
= 60 °C
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 60 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
400
475
A
I
Cpuls
800
950
P
tot
1400
+ 150
W
T
j
T
stg
°C
Storage temperature
-40 ... + 125
Thermal resistance, chip case
R
thJC
R
thJC
D
V
is
-
0.09
0.18
2500
20
K/W
Diode thermal resistance, chip case
Insulation test voltage, t= 1min.
Creepage distance
Vac
mm
Clearance
DIN humidity category, DIN 40 040
-
-
11
F
sec
IEC climatic category, DIN IEC 68-1
-
40 / 125 / 56
相关PDF资料
PDF描述
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参数描述
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