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参数资料
| 型号： | C67070-A2301-A70 |
| 厂商： | SIEMENS AG |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:22-32 |
| 中文描述： | IGBT功率模块（单用菜刀与绝缘金属基板封装开关二极管） |
| 文件页数： | 3/5页 |
| 文件大小： | 76K |
| 代理商： | C67070-A2301-A70 |
Semiconductor Group
3
Jun-13-1996
BSM 200 GAL 120 DN2
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 200 A
R
Gon
= 4.7
Rise time
t
d(on)
-
110
220
ns
V
CC
= 600 V, V
GE
= 15 V, I
C
= 200 A
R
Gon
= 4.7
Turn-off delay time
t
r
-
80
160
V
CC
= 600 V, V
GE
= -15 V, I
C
= 200 A
R
Goff
= 4.7
Fall time
t
d(off)
-
550
800
V
CC
= 600 V, V
GE
= -15 V, I
C
= 200 A
R
Goff
= 4.7
t
f
-
80
120
Free-Wheel Diode
Diode forward voltage
I
F
= 200 A, V
GE
= 0 V, T
j
= 25 °C
I
F
= 200 A, V
GE
= 0 V, T
j
= 125 °C
Reverse recovery time
I
F
= 200 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt= -2000 A/μs, T
j
= 125 °C
Reverse recovery charge
I
F
= 200 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt= -2000 A/μs
T
j
= 25 °C
T
j
= 125 °C
V
F
-
-
-
-
-
-
V
t
rr
-
-
-
μs
Q
rr
-
-
-
-
-
-
μC
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