参数资料
型号: C67070-A2702-A67
厂商: SIEMENS AG
英文描述: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
中文描述: IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包)
文件页数: 8/9页
文件大小: 113K
代理商: C67070-A2702-A67
Semiconductor Group
8
Jul-16-1996
BSM 75 GB 170 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter: T
j
0.0
0.5
1.0
1.5
2.0
2.5
V
V
F
3.5
0
10
20
30
40
50
60
70
80
90
100
110
120
130
A
150
I
F
T
j
=25°C
=125°C
j
T
Transient thermal impedance Diode
Z
th JC
=
(t
p
)
parameter: D = t
p
/ T
-4
10
-5
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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