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参数资料
| 型号： | C771LM |
| 英文描述： | Turboswitch™ - ultra-fast high voltage diode |
| 中文描述： | 晶闸管|反向导电| 2.7KV五（DRM）的|的DO - 200AE |
| 文件页数： | 2/2页 |
| 文件大小： | 31K |
| 代理商： | C771LM |
LIMITING CHARACTERISTICS
52
30
2.03
4.5
Non-Repetitive Half-Cycle
Peak Surge Current & I2t
Itsm (kA)
Pulse Width - milliseconds
I2t (amp-sq-sec)
10
20
30
1
3
5
10
40
50
60
2E6
3E6
4E6
5E6
1
10
100
ON-STATE ENERGY
Half Sine Pulses
Energy per Pulse (joules)
Peak Current (kA)
92I:
500
9000
7000
5000
2000
1000
750
250
(us)
3
4
5
6
200
pulse
width
7
1
10
100
ON-STATE ENERGY
Trapezoidal Wave
di/dt = 100 A/us
Energy per Pulse (joules)
Peak Current, It (kA)
92I:
1000
750
9000
7000
5000
2000
500
(us)
3
4
5
6
200
300
pulse
width
250
7
spec2:
7/31/96
C771 / 6RT215
TEST
CONDITIONS
PARAMETER
SYMBOL
LIMIT
UNITS
Repetitive peak off-
state & reverse
voltage
V
DRM
/V
RRM
T
= -40
to +125
o
C
up to
2800V
volts
Off-state & reverse
current
I
DM
/I
RM
T
j
= 125
o
C
150
ma
@ V
/V
RRM
code LE
@ 80% V
DRM
/V
RRM
codes LM & LS
Peak half cycle
non-repetitive
surge current
I
TSM
60Hz (8.3ms
50Hz (10ms)
32.5
30
kA)
On-state voltage
V
TM
I
T
= 2000A
t
P
= 8.3ms
T
J
= 125
o
C
1.74
volts
Critical rate of
rise of on-state
current
di/dt
rep
V
= 60%V
DRM
60Hz Tj=125
o
C
see gate drive
300
A/us
Critical rate of
rise of off-state
voltage
dv/dt
V
= 80%V
DRM
T
j
= 125
o
C
500
v/us
Peak recovery
current
I
RM
T
= 125
o
C
@ 10A/us
@ 50A/us
@ 100 A/us
130
450
750
A
Circuit commutated
turn-off time
t
Q
400V/us to 80% V
DRM
Vr =
> 50
V
100
us
SPCO
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